News Article
GeneSiC`s hybrid SiC /Silicon modules open new doors
The firm's low Inductance, higher temperature capable silicon carbide mini-modules enable 175 degree C operation are suited to industrial motors, solar inverters and power grid applications
GeneSiC Semiconductor is marketing its second generation hybrid mini-module using 1200V/100A SiC Schottky rectifiers with rugged silicon IGBTs - the GB100XCP12-227, shown below.
The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost, size, weight and volume. GeneSiC says neither silicon IGBT, silicon rectifier solutions, nor pure SiC modules can offer all of these attributes.
The module is targeted for use in a wide variety of applications including industrial motors, solar inverters, specialised equipment and power grid applications.
The SiC Schottky/silicon IGBT mini-modules (Co-packs) offered by GeneSiC are made with silicon IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly available 15V IGBT gate drivers.
The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop of 1.9V at 100A and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element.
"We listened to our key customers since the initial offering of this product almost 2 years back. This second generation 1200 V/100 A Co-pack product has a low inductance design that is suitable for high frequency, high temperature applications. The poor high temperature and reverse recovery characteristics of Silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSiC’s low VF, low capacitance SiC Schottky Diodes enable this breakthrough product," says Ranbir Singh, President of GeneSiC Semiconductor.
With a positive temperature coefficient on VF and a maximum junction temperature of 1750C, the products have typical turn-on energy losses of 23 microJoules.
All devices are fully tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard SOT-227 packages.
The devices are immediately available from GeneSiC’s authorised distributors.
The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost, size, weight and volume. GeneSiC says neither silicon IGBT, silicon rectifier solutions, nor pure SiC modules can offer all of these attributes.
The module is targeted for use in a wide variety of applications including industrial motors, solar inverters, specialised equipment and power grid applications.
The SiC Schottky/silicon IGBT mini-modules (Co-packs) offered by GeneSiC are made with silicon IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly available 15V IGBT gate drivers.
The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop of 1.9V at 100A and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element.
"We listened to our key customers since the initial offering of this product almost 2 years back. This second generation 1200 V/100 A Co-pack product has a low inductance design that is suitable for high frequency, high temperature applications. The poor high temperature and reverse recovery characteristics of Silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSiC’s low VF, low capacitance SiC Schottky Diodes enable this breakthrough product," says Ranbir Singh, President of GeneSiC Semiconductor.
With a positive temperature coefficient on VF and a maximum junction temperature of 1750C, the products have typical turn-on energy losses of 23 microJoules.
All devices are fully tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard SOT-227 packages.
The devices are immediately available from GeneSiC’s authorised distributors.
